NCD57091B资料datasheet下载供应商报价-114ic电子网

首页 >NCD57091B>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
NCD57091B	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57091B	文件：1.97998 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver 文件：1.97998 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57091BDWR2G	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57091BDWR2G	文件：1.97998 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver 文件：1.97998 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI

更多NCD57091B供应商更新时间2024-11-8 11:24:00