Isolated High Current Gate Driver

NCx5710y is a high−current single channel IGBT / SiC / MOSFET driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and READY outputs, active MILLER CLAMP, accurate UV

文件：600.77 Kbytes 页数：28 Pages

ONSEMI

安森美半导体

Isolated Single-Channel High Current Gate Driver

NCD57000 is a high−current single channel IGBT driver with internal\ngalvanic isolation, designed for high system efficiency and reliability\nin high power applications. Its features include complementary inputs,\nopen drain FAULT and Ready outputs, active Miller clamp, accurate\nUVLOs, DESAT protec • High Current Output(±7 A) at IGBT Miller Plateau Voltages\n• Improves system efficiency\n• Short Propagation Delays with Accurate Matching\n• Improves PWM signal integrity\n• DESAT with Soft Turn Off\n• Protection against overload and short circuits\n• Active Miller Clamp and Negative Gate Voltage;

ONSEMI

安森美半导体

Isolated High Current Gate Driver

NCx5710y is a high−current single channel IGBT / SiC / MOSFET driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and READY outputs, active MILLER CLAMP, accurate UV

文件：600.77 Kbytes 页数：28 Pages

ONSEMI

安森美半导体

RF power transistor the LdmoST family

Features ■ Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ ST advanced PowerSO-10RF - STAP package ■ Load mismatch 10:1 all phases ■ In compliance with the 2002/95/EC european directive Description The STAP57100 is a common

文件：181.01 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体