Isolated Dual Channel IGBT/MOSFET Gate Driver

NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up

文件：839.97 Kbytes 页数：24 Pages

ONSEMI

安森美半导体

Isolated Dual Channel IGBT/MOSFET Gate Driver

NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up

文件：843.3 Kbytes 页数：24 Pages

ONSEMI

安森美半导体

Isolated Dual Channel IGBT/MOSFET Gate Driver

NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up

文件：843.3 Kbytes 页数：24 Pages

ONSEMI

安森美半导体

Isolated Dual Channel IGBT/MOSFET Gate Driver

NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up

文件：839.97 Kbytes 页数：24 Pages

ONSEMI

安森美半导体