NCD57256DR2G中文资料安森美半导体数据手册PDF规格书

NCx5725y are high−current two channel isolated IGBT/MOSFET

gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input

to each output and functional isolation between the two output

channels. The device accepts 3.3 V to 20 V bias voltage and signal

levels on the input side and up to 32 V bias voltage on the output side.

The device accepts complementary inputs and offers separate pins for

Disable and Dead Time control for system design convenience.

Drivers are available in wide body SOIC−16 and narrow body

SOIC−16 package.

特性 Features

• High Peak Output Current (±6.5 A*, ±3.5 A*)

• Configurable as a Dual Low−Side or Dual High−Side or Half−Bridge

Driver

• Programmable Overlap or Dead Time control

• Disable Pin to Turn Off Outputs for Power Sequencing

• ANB Function to Offer Flexibility to Set up the Driver as

Half−bridge Driver Operating with a Single Input Signal

• IGBT/MOSFET Gate Clamping during Short Circuit

• Short Propagation Delays with Accurate Matching

• Tight UVLO Thresholds on all Power Supplies

• 3.3 V, 5 V, and 15 V Logic Input

• 2.5 or 5 kVrms* Galvanic Isolation from Input to each Output

and 1.5 kVrms Differential Voltage between Output Channels

• 1200 V Working Voltage (per VDE0884−11 Requirements)

• High Common Mode Transient Immunity

• NCV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q100

Qualified and PPAP Capable

• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

Typical Applications

• EV Chargers

• Motor Control

• Uninterruptible Power Supplies (UPS)

• Industrial Power Supplies

• Solar Inverters

• Automotive Applications