Isolated Dual Channel IGBT Gate Driver

NCx575y0 are high−current two channel isolated IGBT gate drivers with 5 kVrms internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias vo

文件：821.76 Kbytes 页数：23 Pages

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Isolated Dual-Channel IGBT Gate Driver with >8mm Creepage and Clearance

NCD(V)57252/3/5/6 are high−current dual-channel isolated IGBT gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to • High Peak Output Current (±6.5 A, ±3.5 A)\n• Enables Removal of Buffer\n• Configurable as a Dual Low−Side or Dual High−Side or Half−Bridge Driver\n• Design Flexibility\n• Tight UVLO Thresholds on all Power Supplies\n• Consistent Performance\n• 2.5 or 5 kVrms Galvanic Isolation from Input to each O;

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安森美半导体

Isolated Dual Channel IGBT Gate Driver

NCx575y0 are high−current two channel isolated IGBT gate drivers with 5 kVrms internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias vo

文件：821.76 Kbytes 页数：23 Pages

ONSEMI

安森美半导体

Isolated Dual Channel IGBT Gate Driver

NCx575y0 are high−current two channel isolated IGBT gate drivers with 5 kVrms internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias vo

文件：821.76 Kbytes 页数：23 Pages

ONSEMI

安森美半导体