丝印：NCE0117AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0117AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =17A RDS(ON)

文件：658.19 Kbytes 页数：7 Pages

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丝印：NCE0125AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0125AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =25A RDS(ON)

文件：597.91 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE0125AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0125AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =25A RDS(ON)

文件：599.85 Kbytes 页数：7 Pages

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丝印：NCE0130A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0130A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =30A RDS(ON)

文件：350.52 Kbytes 页数：7 Pages

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丝印：NCE0130GA；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0130GA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

文件：369.82 Kbytes 页数：7 Pages

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丝印：NCE0140AK2；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0140AK2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =40A RDS(ON)

文件：632.58 Kbytes 页数：7 Pages

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丝印：NCE0140I2；Package：TO-251；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0140I2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =40A RDS(ON)

文件：757.38 Kbytes 页数：8 Pages

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丝印：NCE0157A2D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0157A2D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =57A RDS(ON)

文件：635.88 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE0157AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0157AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =57A RDS(ON)

文件：441.56 Kbytes 页数：7 Pages

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丝印：NCE0157G；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0157G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectificati

文件：706.3 Kbytes 页数：7 Pages

NCEPOWER

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