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NAND512R3A2CZA6

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512R3A2CZA6E

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512R3A2CZA6E

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

Description The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C have a density of 512 Mbi

文件:1.27065 Mbytes 页数:51 Pages

NUMONYX

NAND512R3A2CZA6F

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

Description The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C have a density of 512 Mbi

文件:1.27065 Mbytes 页数:51 Pages

NUMONYX

NAND512R3A2CZA6F

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512R3A2CZA6T

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512R3A2CZA6E

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

文件:674.58 Kbytes 页数:51 Pages

STMICROELECTRONICS

意法半导体

NAND512R3A2CZA6F

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

文件:674.58 Kbytes 页数:51 Pages

STMICROELECTRONICS

意法半导体

NAND512R3A2CZA6E

Package:63-TFBGA;包装:管件 类别:集成电路(IC) 存储器 描述:IC FLSH 512MBIT PARALLEL 63VFBGA

ELPIDA

尔必达

详细参数

  • 型号:

    NAND512R3A2CZA6

  • 功能描述:

    IC FLASH 512MBIT 63VFBGA

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 产品变化通告:

    Product Discontinuation 26/Apr/2010

  • 标准包装:

    136

  • 系列:

    - 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 同步,DDR II

  • 存储容量:

    18M(1M x 18)

  • 速度:

    200MHz

  • 接口:

    并联

  • 电源电压:

    1.7 V ~ 1.9 V

  • 工作温度:

    0°C ~ 70°C

  • 封装/外壳:

    165-TBGA

  • 供应商设备封装:

    165-CABGA(13x15)

  • 包装:

    托盘

  • 其它名称:

    71P71804S200BQ

供应商型号品牌批号封装库存备注价格
NUMONYX
2023+
BGA
53500
正品,原装现货
询价
ST
25+
BGA
6500
十七年专营原装现货一手货源,样品免费送
询价
ST(意法)
24+
N/A
8048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
16+
BGA
2500
进口原装现货/价格优势!
询价
ST
17+
BGA
6200
100%原装正品现货
询价
ST
23+
BGA
8650
受权代理!全新原装现货特价热卖!
询价
ST
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
ST
1923+
BGA
5896
原装进口现货库存专业工厂研究所配单供货
询价
ST
23+
BGA
3000
原装正品假一罚百!可开增票!
询价
ST/意法
24+
BGA
60000
全新原装现货
询价
更多NAND512R3A2CZA6供应商 更新时间2025-10-4 15:04:00