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NAND512R3A2CZA6E中文资料PDF规格书

NAND512R3A2CZA6E
厂商型号

NAND512R3A2CZA6E

参数属性

NAND512R3A2CZA6E 封装/外壳为63-TFBGA;包装为管件;类别为集成电路(IC) > 存储器;产品描述:IC FLSH 512MBIT PARALLEL 63VFBGA

功能描述

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

文件大小

1.27065 Mbytes

页面数量

51

生产厂商 NUMONYX
企业简称

NUMONYX恒忆

中文名称

恒忆官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-4-29 22:30:00

NAND512R3A2CZA6E规格书详情

Description

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

program/erase cycles for each block. A Write Protect pin is available to give a hardware

protection against program and erase operations.

Features

● High density NAND Flash memories

– 512 Mbit memory array

– Cost effective solutions for mass storage applications

● NAND interface

– x 8 or x 16 bus width

– Multiplexed Address/ Data

● Supply voltage: 1.8 V, 3.0 V

● Page size

– x 8 device: (512 + 16 spare) bytes

– x 16 device: (256 + 8 spare) words

● Block size

– x 8 device: (16 K + 512 spare) bytes

– x 16 device: (8 K + 256 spare) words

● Page Read/Program

– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)

– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

– Page Program time: 200 µs (typ)

● Copy Back Program mode

● Fast Block Erase: 2 ms (typ)

● Status Register

● Electronic signature

● Chip Enable ‘don’t care’

● Serial Number option

● Hardware Data Protection

– Program/Erase locked during Power transitions

● Data integrity

– 100,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

● ECOPACK® packages

● Development tools

– Error Correction Code models

– Bad Blocks Management and Wear Leveling algorithms

– Hardware simulation models

产品属性

  • 产品编号:

    NAND512R3A2CZA6E

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    管件

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    闪存 - NAND

  • 存储容量:

    512Mb(64M x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    50ns

  • 电压 - 供电:

    1.7V ~ 1.95V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    63-TFBGA

  • 供应商器件封装:

    63-VFBGA(9x11)

  • 描述:

    IC FLSH 512MBIT PARALLEL 63VFBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
ST
2020+
BGA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
Micron Technology Inc.
21+
63-VFBGA(9x11)
56200
一级代理/放心采购
询价
MRON/美光
23+
NA/
59
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ST
2018+
BGA
6528
承若只做进口原装正品假一赔十!
询价
ST/意法
24+
BGA
860000
明嘉莱只做原装正品现货
询价
ST
22+
BGA
30000
原装正品
询价
NUMONYX
2020+
原厂封装
350000
100%进口原装正品公司现货库存
询价
Micron Technology Inc.
21+
144-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
ST
BGA
699839
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST
2017+
BGA
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价