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NAND512R3A2CZA6中文资料PDF规格书

NAND512R3A2CZA6
厂商型号

NAND512R3A2CZA6

参数属性

NAND512R3A2CZA6 封装/外壳为63-TFBGA;包装为管件;类别为集成电路(IC) > 存储器;产品描述:IC FLSH 512MBIT PARALLEL 63VFBGA

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

文件大小

916.59 Kbytes

页面数量

57

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体(ST)集团官网

原厂标识
数据手册

下载地址一下载地址二原厂数据手册到原厂下载

更新时间

2024-4-29 22:30:00

NAND512R3A2CZA6规格书详情

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

产品属性

  • 产品编号:

    NAND512R3A2CZA6E

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    管件

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    闪存 - NAND

  • 存储容量:

    512Mb(64M x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    50ns

  • 电压 - 供电:

    1.7V ~ 1.95V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    63-TFBGA

  • 供应商器件封装:

    63-VFBGA(9x11)

  • 描述:

    IC FLSH 512MBIT PARALLEL 63VFBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
ST
2020+
BGA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
MRON/美光
23+
NA/
59
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ST
23+
BGA
20000
原厂原装正品现货
询价
ST
2018+
BGA
6528
承若只做进口原装正品假一赔十!
询价
ST/意法
24+
BGA
860000
明嘉莱只做原装正品现货
询价
ST
22+
BGA
30000
原装正品
询价
NUMONYX
2020+
原厂封装
350000
100%进口原装正品公司现货库存
询价
Micron Technology Inc.
21+
144-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
ST
23+
BGA
3000
原装正品假一罚百!可开增票!
询价
ST
BGA
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价