丝印：N64；Package：SOT-23；NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors, R1, R2 • Lead, Halogen and Antimony Free, RoHS Compliant • Green Device (Notes 2 and 3)

文件：79.88 Kbytes 页数：4 Pages

DIODES

美台半导体

Voidless Hermetically Sealed Unidirectional Voidless Hermetically Sealed Unidirectional

DESCRIPTION This series of industry recognized voidless-hermetically-sealed Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF- 19500/551 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak “Stand

文件：508.47 Kbytes 页数：6 Pages

Microsemi

美高森美

64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M 횞 16 Bits

Overview The N64T1630C1B is an integrated memory device containing a 64 Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4,194,304 words by 16 bits. It is designed to be compatible in operation and interface to standard 6T SRAMS. The device is designed fo

文件：348.47 Kbytes 页数：18 Pages

NANOAMP

64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M 횞 16 Bits

Overview The N64T1630C1B is an integrated memory device containing a 64 Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4,194,304 words by 16 bits. It is designed to be compatible in operation and interface to standard 6T SRAMS. The device is designed fo

文件：348.47 Kbytes 页数：18 Pages

NANOAMP

64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M 횞 16 Bits

Overview The N64T1630C1B is an integrated memory device containing a 64 Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4,194,304 words by 16 bits. It is designed to be compatible in operation and interface to standard 6T SRAMS. The device is designed fo

文件：348.47 Kbytes 页数：18 Pages

NANOAMP

64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

文件：714.18 Kbytes 页数：49 Pages

AMD

超威半导体

64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

文件：714.18 Kbytes 页数：49 Pages

AMD

超威半导体

64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

文件：714.18 Kbytes 页数：49 Pages

AMD

超威半导体

Infi niiVision 2000 X-Series

文件：5.94645 Mbytes 页数：23 Pages

KEYSIGHT

是德科技

InfiniiVision 3000T X- Series

文件：2.66855 Mbytes 页数：38 Pages

KEYSIGHT

是德科技