N-channel MOSFET

Features • Low on-state resistance : RDS(on) = 4.8 mΩ max. ( VGS = 10 V, ID = 40 A ) • Low Ciss : Ciss = 3200 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±80 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：580.88 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-channel MOSFET

Features • Low on-state resistance : RDS(on) = 4.8 mΩ max. ( VGS = 10 V, ID = 40 A ) • Low Ciss : Ciss = 3200 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±80 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：580.88 Kbytes 页数：7 Pages

RENESAS

瑞萨

Power MOSFETs with Support for High-efficiency Drive and Low Heat Design

Renesas

瑞萨

TRIACS

文件：392.24 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TRIACS

文件：392.24 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

AC switching

文件：287.53 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司