4Mb Ultra-Low Power Asynchronous CMOS SRAM

Features • Single Wide Power Supply Range 2.2 to 3.6 Volts • Very low standby current 2.0μA at 3.0V (Typical) • Very low operating current 1.5mA at 3.0V and 1μs (Typical)

文件：271.75 Kbytes 页数：10 Pages

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4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Features

文件：273.79 Kbytes 页数：11 Pages

NANOAMP

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Features

文件：273.79 Kbytes 页数：11 Pages

NANOAMP

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Features

文件：273.79 Kbytes 页数：11 Pages

NANOAMP