N04L163WC1AB中文资料NANOAMP数据手册PDF规格书

Overview

The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

特性 Features

• Single Wide Power Supply Range

2.3 to 3.6 Volts

• Very low standby current

4.0µA at 3.0V (Typical)

• Very low operating current

2.0mA at 3.0V and 1µs (Typical)

• Very low Page Mode operating current

0.8mA at 3.0V and 1µs (Typical)

• Simple memory control

Single Chip Enable (CE)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.8V

• Very fast output enable access time

25ns OE access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

• Compact space saving BGA package available