N04Q1612C2BT-70C规格书市场行情NANOAMP-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
N04Q1612C2BT-70C	文件：298.83 Kbytes Page：13 Pages	4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K횞16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide ultra-low active and standby power. Features • Multiple Po 文件：298.83 Kbytes 页数：13 Pages	NANOAMP	NANOAMP
N04Q1612C2BT-70I	文件：298.83 Kbytes Page：13 Pages	4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K횞16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide ultra-low active and standby power. Features • Multiple Po 文件：298.83 Kbytes 页数：13 Pages	NANOAMP	NANOAMP

型号：
N04Q1612C2BT-70C
制造商：
NANOAMP
制造商全称：
NANOAMP
功能描述：
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY

更多N04Q1612C2BT-70C供应商更新时间2025-12-19 13:30:00