丝印：N04；Package：SOT523；NPN PRE-BIASED TRANSISTOR IN SOT523

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTA) • Built-In Biasing Resistors, R1 = R2 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change

文件：551.24 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：N04；Package：SOT-23；Supervisory Circuits with Watchdog and Manual Reset in 5-Lead SOT-23

文件：372.57 Kbytes 页数：14 Pages

AD

亚德诺

丝印：N04；Package：SOT-23；Supervisory Circuits with Watchdog and Manual Reset in 5-Lead SOT-23

文件：372.57 Kbytes 页数：14 Pages

AD

亚德诺

丝印：N040AT；Package：HSMT8；Pch -80V -10A Power MOSFET

Features 1) Low on - resistance 2) High Power small mold Package (HSMT8) 3) Pb-free plating ; RoHS compliant 4) 100% Rg and UIS tested 5) Halogen Free Application Switching Motor drives

文件：2.54446 Mbytes 页数：13 Pages

ROHM

罗姆

MOS FIELD EFFECT TRANSISTOR

Description The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications. Features • 2.5 V drive available • Super low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID =

文件：309.72 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications. Features • 2.5 V drive available • Super low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID =

文件：309.72 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications. Features • 2.5 V drive available • Super low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID =

文件：309.72 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS=40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.52 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS=40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.02 Kbytes 页数：2 Pages

ISC

无锡固电

Single-Gang Surface Mounting Box, European Style, 81 x 81 x 45 mm, White

Features European-Style Back Box Connects Audio/Video, Voice and Data Cable Lines in Your Network This single-gang surface-mount box combines with a Tripp Lite or other compatible wall plate (sold separately) to complete a premise wiring application, such as home theater (audio/video), VoIP pho

文件：40.46 Kbytes 页数：2 Pages

TRIPPLITE