MOS FIELD EFFECT TRANSISTOR

Description The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications. Features • 2.5 V drive available • Super low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID =

文件：309.72 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

Description The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications. Features • 2.5 V drive available • Super low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID =

文件：309.72 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

Description The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications. Features • 2.5 V drive available • Super low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID =

文件：309.72 Kbytes 页数：10 Pages

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N0400P

文件：232.95 Kbytes 页数：9 Pages

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MOS FIELD EFFECT TRANSISTOR

文件：232.95 Kbytes 页数：9 Pages

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N0400P

文件：232.95 Kbytes 页数：9 Pages

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MOS FIELD EFFECT TRANSISTOR

文件：232.95 Kbytes 页数：9 Pages

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N0400P

文件：232.95 Kbytes 页数：9 Pages

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MOS FIELD EFFECT TRANSISTOR

文件：232.95 Kbytes 页数：9 Pages

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Pch Single Power Mosfet -40V -15A 40Mohm Mp-3Zk/To-252

The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2. 5 V drive switching applications. • 2.5 V drive available\n• Super low on-state resistanceRDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A)\n• Built-in gate protection diode;

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