4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 횞 16 bit

The N04L163WC2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power Features • Single Wide P

文件：265.34 Kbytes 页数：11 Pages

NANOAMP

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 횞 16 bit

The N04L163WC2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power Features • Single Wide P

文件：265.34 Kbytes 页数：11 Pages

NANOAMP

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 횞 16 bit

The N04L163WC2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power Features • Single Wide P

文件：265.34 Kbytes 页数：11 Pages

NANOAMP

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 횞 16 bit

The N04L163WC2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power Features • Single Wide P

文件：265.34 Kbytes 页数：11 Pages

NANOAMP

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 횞 16 bit

The N04L163WC2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power Features • Single Wide P

文件：265.34 Kbytes 页数：11 Pages

NANOAMP

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit

ONSEMI

安森美半导体

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit

The N04L163WC2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power • Single Wide Power Supply Range 2.3 to 3.6 Volts\n• Very low standby current 4.0μA at 3.0V (Typical)\n• Very low operating current 2.0mA at 3.0V and 1μs (Typical)\n• Very low Page Mode operating current 0.8mA at 3.0V and 1μs (Typical);

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