MXR9745T1

31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET

TheRFSmallSignalLine SiliconLateralFET N–ChannelEnhancement–ModeMOSFET Designedforuseinlowvoltage,moderatepoweramplifierssuchasportableanaloganddigitalcellularradiosandPCRFmodems. •PerformanceSpecificationsat6Volt,850MHz: OutputPower=31.

MXR2312G

Improved, Ultra Low Noise 짹2 g Dual Axis Accelerometer with Ratiometric Outputs

MXR2312M

Improved, Ultra Low Noise 짹2 g Dual Axis Accelerometer with Ratiometric Outputs

MXR2999E

Low Offset drift, 짹0.5g Dual Axis Accelerometer with Ratiometric Output

MXR2999EF

Low Offset drift, 짹0.5g Dual Axis Accelerometer with Ratiometric Output

MXR2999EL

Low Offset drift, 짹0.5g Dual Axis Accelerometer with Ratiometric Output

MXR2999G

Improved 짹1 g Dual Axis Accelerometer with Ratiometric Outputs

MXR2999GF

Improved 짹1 g Dual Axis Accelerometer with Ratiometric Outputs

MXR2999GL

Improved 짹1 g Dual Axis Accelerometer with Ratiometric Outputs

MXR2999M

Improved 짹1 g Dual Axis Accelerometer with Ratiometric Outputs