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ADG636	文件：147.68 Kbytes Page：12 Pages	1pCChargeInjection,100pALeakageCMOS5V/5V/3VDualSPDTSwitch GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG636YRU	文件：147.68 Kbytes Page：12 Pages	1pCChargeInjection,100pALeakageCMOS5V/5V/3VDualSPDTSwitch GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG636YRU	文件：498.96 Kbytes Page：16 Pages	1pCChargeInjection,100pALeakage,CMOS,짹5V/5V/3VDualSPDTSwitch GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG636YRU-REEL	文件：498.96 Kbytes Page：16 Pages	1pCChargeInjection,100pALeakage,CMOS,짹5V/5V/3VDualSPDTSwitch GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
AL-HG636A	文件：338.41 Kbytes Page：5 Pages	GreenSMDChipLEDLamps(0.6mmHeight)	A-BRIGHTA-BRIGHT Inc 光旗实业光旗实业股份有限公司	A-BRIGHT
AL-HG636D	文件：339.61 Kbytes Page：5 Pages	GreenSMDChipLEDLamps(0.8mmHeight)	A-BRIGHTA-BRIGHT Inc 光旗实业光旗实业股份有限公司	A-BRIGHT
AT636	文件：44.07 Kbytes Page：4 Pages	PHASECONTROLTHYRISTOR PHASECONTROLTHYRISTOR Repetitivevoltageupto1800V Meanon-statecurrent1965A Surgecurrent36kA	POSEICO Power Semiconductors	POSEICO
ATS636LSE	文件：814.15 Kbytes Page：15 Pages	ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O	Allegro Allegro MicroSystems	Allegro
ATS636LSETN-T	文件：814.15 Kbytes Page：15 Pages	ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O	Allegro Allegro MicroSystems	Allegro
ATS636LSETN-T	文件：348.67 Kbytes Page：15 Pages	TheATS636LSEprogrammable,truepower-onstate(TPOS),deviceisoptimizedHall-effectICandrare-earthpelletcombinationsthatswitchinresponsetomagneticsignals...	Allegro Allegro MicroSystems	Allegro
BC636	文件：1.9422 Mbytes Page：14 Pages	GERMANIOVETRANZISTORY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BC636	文件：144.01 Kbytes Page：15 Pages	45V,1APNPmediumpowertransistors	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BC636	文件：221.74 Kbytes Page：2 Pages	PNPTypePlasticEncapsulateTransistors FEATURE PowerDissipation:PCM:0.83mW(Tamb=25°C)	SECOS SeCoS Halbleitertechnologie GmbH	SECOS
BC636	文件：116.45 Kbytes Page：4 Pages	HighCurrentTransistors HighCurrentTransistorsPNPSilicon	MotorolaMotorola, Inc 摩托罗拉	Motorola
BC636	文件：86.61 Kbytes Page：4 Pages	HighCurrentTransistors(PNPSilicon) HighCurrentTransistorsPNPSilicon	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BC636	文件：43.92 Kbytes Page：8 Pages	PNPmediumpowertransistors DESCRIPTION PNPmediumpowertransistorinaTO-92;SOT54plasticpackage.NPcomplements:BC635,BC637andBC639. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Audioandvideoamplifiers.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BC636	文件：126.87 Kbytes Page：5 Pages	PNPSiliconAFTransistors(HighcurrentgainHighcollectorcurrent) PNPSiliconAFTransistors ●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC635,BC637,BC639(NPN)	SIEMENS Siemens Ltd	SIEMENS
BC636	文件：56.7 Kbytes Page：4 Pages	HighCurrentTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BC636	文件：184.61 Kbytes Page：2 Pages	COMPLEMENTARYSILICONTRANSISTORS	MICRO-ELECTRONICS Micro Electronics	MICRO-ELECTRONICS
BC636	文件：424.45 Kbytes Page：5 Pages	PNPEpitaxialSiliconTransistor	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
MX636JN+
制造商：
Rochester Electronics LLC
制造商：
Maxim Integrated Products

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市冠亿通科技有限公司	MX636JN+	Maxim	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市大联智电子有限公司	MX636JN+	Maxim Integrated	2022+	-	6680	原厂原装，欢迎咨询	询价
瑞航达科技(深圳)有限公司	MX636JQ	MAXIM	05+		100	原装正品	询价
深圳市昌源伟业科技有限公司	MX636KCWE	MAXIM	15+	SOP	320	全新原装正品现货	询价
深圳市勤思达科技有限公司	MX636KCWE	MAXIM	23+	SMD16	8500	原装正品,现货销售	询价
深圳市毅创腾电子科技有限公司	MX636KCWE	MAXIM	23+	SOP-16	5000	绝对全新原装!现货!特价!请放心订购!	询价
深圳市莱克讯科技有限公司	MX636KCWE	MAXIM	2017+	SOP-16	25689	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市佳鑫美电子科技有限公司	MX636KCWE	MAXIM	22+	WSO	5500	优势产品!100%全新原装现货供应	询价
深圳市弘为电子有限公司	MX636KCWE	MAXIM	16+		2860	原装现货假一罚十	询价
深圳市欧立现代科技有限公司	MX636KCWE	MAXIM	22+	SOP-16	6980	原装现货,可开13%税票	询价

更多MX636JN+供应商更新时间2024-5-8 18:00:00

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