COMPLEMENTARY MOSFET: N+P-CHANNEL, VDS=±30V, ID=6A/-5A, PD=2.5W ,SOP-8

Mosemi

牧芯微

SWITCHMODE Power Rectifiers

Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRVB Prefix for Automotive and Other Applications Requiring Uniqu

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ONSEMI

安森美半导体

Thyristor-Diode Module, 460 Amps

文件：190.84 Kbytes 页数：3 Pages

NAINA

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

文件：21.48 Kbytes 页数：2 Pages

NTE