GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

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Microsemi

美高森美

Varactors (Packaged and Die form)

Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a variety of microwave

Microchip

微芯科技

15 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20005 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold meta

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Ericsson

爱立信

20A GLASS PASSIVATED BRIDGE RECTIFIER

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ZSELEC

淄博圣诺

Switching Type(Chopper Self Oscillation Type)

Features ● Requires only 4 external components ● Small size and high efficiency ● Low switching noise ● Variable output voltage ● Use of Sanken semiconductors components ensures high reliability Applications ● For power supplies in office equipment such as electronic typewri

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Sanken

三垦