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MV20010

GaAs Varactor Diodes Abrupt Junction

Description Microsemi’sGaAsabruptjunctionvaractorsarefabricatedfromepitaxiallayersgrownatMicrosemiusingChemicalVaporDeposition.ThelayersareprocessedusingproprietarytechniquesresultinginahighQfactorandveryrepeatabletuningcurves.Thediodesareavailableinavarie

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MV20010-190

Package:模具;包装:托盘 类别:分立半导体产品 二极管 - 可变电容(变容器,可变电抗器) 描述:GAAS TVAR NON HERMETIC MICROSTRI

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

PD20010-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

PD20010S-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

PD20010STR-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

PD20010TR-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

PNE20010ER

200V,1Ahyperfastrecoveryrectifier

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNE20010ER-Q

200V,1Ahyperfastrecoveryrectifier

1.Generaldescription Highpowerdensity,hyperfastrecoveryrectifierwithhigh-efficiencyplanartechnology, encapsulatedinasmallandflatleadSOD123WSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •ReversevoltageVR≤200V •ForwardcurrentIF≤1A •Hyp

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNE20010EXD

200V,1Ahyperfastrecoveryrectifier

1.Generaldescription Highpowerdensity,hyperfastrecoveryrectifierwithhigh-efficiencyplanartechnology, encapsulatedinaCFP2-HP(SOD323HP)powerandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:I

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNE20010EXD-Q

200V,1Ahyperfastrecoveryrectifier

1.Generaldescription Highpowerdensity,hyperfastrecoveryrectifierwithhigh-efficiencyplanartechnology, encapsulatedinaCFP2-HP(SOD323HP)powerandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:I

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    MV20010

  • 制造商:

    MICROSEMI

  • 制造商全称:

    Microsemi Corporation

  • 功能描述:

    GaAs Varactor Diodes Abrupt Junction

供应商型号品牌批号封装库存备注价格
Microchip
121
只做正品
询价
SHINDENGEN/新电元
23+
SOP16
16580
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MIT
05+
原厂原装
6851
只做全新原装真实现货供应
询价
24+
5000
公司存货
询价
2021+
60000
原装现货,欢迎询价
询价
PERICOM
2447
SOP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MITSUBISHI/三菱
2022+
原厂原封
57550
询价
N/A
16+
NA
8800
原装现货,货真价优
询价
N/A
0346
34
优势货源原装正品
询价
ON
2016+
TO92
2585
只做进口原装现货!或者订货,假一赔十!
询价
更多MV20010供应商 更新时间2025-5-29 14:01:00