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MUR6065P

Ultra-Fast Recovery Diodes 60A FRED Pt

Features ● Adopt FRED chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical

文件:1.04074 Mbytes 页数:4 Pages

LUGUANG

鲁光电子

MUR6065P

超快恢复二极管

YJ

益嘉源

NCE6065AG

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6065AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =65A RDS(ON)

文件:659.24 Kbytes 页数:7 Pages

NCEPOWER

新洁能

NCE6065G

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6065G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =65A RDS(ON)

文件:659.01 Kbytes 页数:7 Pages

NCEPOWER

新洁能

RJP6065

Silicon N Channel IGBT High Speed Power Switching

* Low collector to emitter saturation voltage VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)  * Gate to emitter voltage rating 30 V * Pb-free lead plating and chip bonding

文件:87.98 Kbytes 页数:8 Pages

RENESAS

瑞萨

技术参数

  • VRM_Max (V):

    650

  • Io_Max(A):

    60

  • IFSM_Max(A):

    500

  • Rated lo(A):

    60

  • VF_Max(V):

    2.5

  • IR@25℃IR(uA):

    5

  • IR@125℃IR(uA):

    200

  • Trr_Max(ns):

    75

  • Cj(PF):

    295

  • Tj(℃):

    -55~+175

  • Status:

    Active

供应商型号品牌批号封装库存备注价格
YANGJIE
24+
TO-247AC
50000
原厂直销全新原装正品现货 欢迎选购
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IR
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
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IR
18+
TO-220
41200
原装正品,现货特价
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NS/国半
23+
MSOP8
69820
终端可以免费供样,支持BOM配单!
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IR
TO-220
22+
6000
十年配单,只做原装
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IR
23+
TO-220
8000
只做原装现货
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IR
25+
TO-TO-220
12300
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MOT
8504
13
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ON/安森美
23+
TO
16200
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询价
24+
20000
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更多MUR6065P供应商 更新时间2025-10-10 15:27:00