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MUR30120FCT

30.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件:458.83 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

MUR30120FCTR

30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件:264.3 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

MUR30120P

丝印:MUR30120P;Package:TO-247AD-2L;Ultra-Fast Recovery Recifier Diodes MUR30120P

FEATURES High frequency operation High surge forward current capability High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件:2.17432 Mbytes 页数:3 Pages

RFE

RFE international

MUR30120P

Ultrafast Recovery Rectifier

FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies, inverters and as free wheeling d

文件:316.11 Kbytes 页数:2 Pages

ISC

无锡固电

MUR30120P

Ultra-Fast Recovery Diodes 30A FRED Pt

Features ● Adopt FRED chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical

文件:1.08342 Mbytes 页数:4 Pages

LUGUANG

鲁光电子

MUR30120PA

30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件:284.34 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

MUR30120PL

30.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件:286.85 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

MUR30120PL

Ultra-Fast Recovery Rectifier Diodes

Features ● Adopt FRD chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical A

文件:1.17787 Mbytes 页数:4 Pages

LUGUANG

鲁光电子

MUR30120PR

30.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件:292.61 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

MUR30120PT

30.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件:418.56 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

技术参数

  • AEC Qualified:

    NO

  • Pb Free:

    YES

  • Halide free:

    YES

  • Reach:

    YES

  • RoHS:

    YES

  • Marketing Status:

    Active

  • Configuration:

    Single

  • VRRM(V)max.:

    1200

  • IF(A)max.:

    30

  • VF (V)max:

    3.2

  • IFSM(A)max.:

    300

  • IR(uA)max.:

    10

  • trr(ns)max:

    60

  • TJ(°C)max.:

    150

  • TJ(°C)min.:

    -55

  • ECCN(US):

    EAR99

  • Category:

    快恢复二极管

供应商型号品牌批号封装库存备注价格
ON/安森美
25+
TO-247
45000
ON/安森美全新现货MUR30120即刻询购立享优惠#长期有排单订
询价
HARRIS/哈里斯
24+
TO-247
157637
明嘉莱只做原装正品现货
询价
哈里斯
05+
TO-247
10000
全新原装 绝对有货
询价
ON
24+
TO-3P
6430
原装现货/欢迎来电咨询
询价
GI
22+
TO-3P
6000
十年配单,只做原装
询价
哈里斯
23+
TO3P
20000
全新原装假一赔十
询价
DONGHAI
23+
TO-247-2L
80000
原装正品,一级代理
询价
GI
25+
TO-3P
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ON(安森美)
2511
5904
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
ON
23+
TO-3P
3600
全新环保深圳现货,特价
询价
更多MUR30120供应商 更新时间2026-1-29 21:08:00