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MUN5230DW1

Dual NPN Bias Resistor Transistors

文件:145.21 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MUN5230DW1T1

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digita

文件:199.89 Kbytes 页数:8 Pages

LRC

乐山无线电

MUN5230DW1T1

Dual Bias Resistor Trasnsistors

Dual Bias Resistor Trasnsistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digit

文件:179.93 Kbytes 页数:10 Pages

Motorola

摩托罗拉

MUN5230DW1T1

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

文件:179.93 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

MUN5230DW1T1

Dual Bias Resistor Transistors

NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to re

文件:803.41 Kbytes 页数:12 Pages

WILLAS

威伦电子

MUN5230DW1T1

Dual Bias Resistor Transistors

文件:151.62 Kbytes 页数:20 Pages

ONSEMI

安森美半导体

MUN5230DW1T1

Dual Bias Resistor Transistors

文件:139.52 Kbytes 页数:21 Pages

ONSEMI

安森美半导体

MUN5230DW1T1

Dual Bias ResistorTransistors

文件:501.15 Kbytes 页数:8 Pages

ETL

亚历电子

MUN5230DW1T1G

Dual NPN Bias Resistor Transistors

文件:145.21 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MUN5230DW1T1G

Dual Bias Resistor Transistors

文件:216.54 Kbytes 页数:20 Pages

ONSEMI

安森美半导体

技术参数

  • 电流 - 集电极(Ic)(最大值):

    100mA

  • 电压 - 集射极击穿(最大值):

    50V

  • 电阻器 - 基底(R1):

    1 千欧

  • 电阻器 - 发射极基底(R2):

    1 千欧

  • 不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值):

    3 @ 5mA,10V

  • 不同 Ib,Ic 时的 Vce 饱和值(最大值):

    250mV @ 5mA,10mA

  • 电流 - 集电极截止(最大值):

    500nA

  • 功率 - 最大值:

    250mW

  • 安装类型:

    表面贴装

  • 封装/外壳:

    6-TSSOP,SC-88,SOT-363

  • 供应商器件封装:

    SC-88/SC70-6/SOT-363

供应商型号品牌批号封装库存备注价格
SOT-363
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
ON
24+/25+
2990
原装正品现货库存价优
询价
POWER
23+
SOT163
5000
原装正品,假一罚十
询价
ON
24+
SOT-363
30000
询价
ONSEMICONDU
24+
原封装
279000
原装现货假一罚十
询价
ON
24+
SC-88
6000
进口原装正品假一赔十,货期7-10天
询价
ON
1728+
?
7500
只做原装进口,假一罚十
询价
ONSemiconductor
24+
NA
3641
进口原装正品优势供应
询价
ON
23+
SOT363
8560
受权代理!全新原装现货特价热卖!
询价
ON
25+23+
SC70-6
29145
绝对原装正品现货,全新深圳原装进口现货
询价
更多MUN5230DW1供应商 更新时间2025-10-11 17:00:00