TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is

文件：276.42 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

文件：273.05 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.24Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：297.66 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：297.73 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

文件：280.19 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

Subminiature Cylindrical Connectors

• EMI Shielding - solid metal to metal coupling, grounding fingers, electroless nickel plating, and thicker wall sections provide superior EMI shielding capability of 65dB minimum at 10 GHz • Contact Protection - recessed pins in this 100 scoopproof connector minimize potential contact damage

文件：1.12295 Mbytes 页数：54 Pages

AMPHENOL

安费诺

8051 Embedded Monitor Controller Flash Type with ISP

[MYSON TECHNOLOGY] GENERAL DESCRIPTIONS The MTV312M micro-controller is an 8051 CPU core embedded device especially tailored for CRT/LCD Monitor applications. It includes an 8051 CPU core, 1024-byte SRAM, 14 built-in PWM DACs, VESA DDC interface, 4-channel A/D converter, and a

文件：209.77 Kbytes 页数：27 Pages

ETCList of Unclassifed Manufacturers

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8051 Embedded Monitor Controller Flash Type with ISP

[MYSON TECHNOLOGY] GENERAL DESCRIPTIONS The MTV312M micro-controller is an 8051 CPU core embedded device especially tailored for CRT/LCD Monitor applications. It includes an 8051 CPU core, 1024-byte SRAM, 14 built-in PWM DACs, VESA DDC interface, 4-channel A/D converter, and a

文件：209.77 Kbytes 页数：27 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

8051 Embedded Monitor Controller Flash Type with ISP

[MYSON TECHNOLOGY] GENERAL DESCRIPTIONS The MTV312M micro-controller is an 8051 CPU core embedded device especially tailored for CRT/LCD Monitor applications. It includes an 8051 CPU core, 1024-byte SRAM, 14 built-in PWM DACs, VESA DDC interface, 4-channel A/D converter, and a

文件：209.77 Kbytes 页数：27 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.91 Kbytes 页数：2 Pages

ISC

无锡固电