TMOS IV POWER FIELD EFFECT TRANSISTORS

TMOS IV Power Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate

文件：1.69525 Mbytes 页数：6 Pages

Motorola

摩托罗拉

Trans MOSFET N-CH 50V 45A

NJS

TMOS IV POWER FIELD EFFECT TRANSISTORS

TMOS IV Power Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate

文件：1.69525 Mbytes 页数：6 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 35mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.18 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOS Field-Effect Transistors

N-Channel Enhancement-Mode Power Field-Effect Transistors The RFH45N05 and RFH45N06 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bip

文件：85.56 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司