isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive · DC-DC converter · power switch and solenoid drive

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ISC

无锡固电

Power Field Effect Transistor

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans MOSFET N-CH Si 500V 30A

NJS

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

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MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

文件：237.96 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N?묬hannel Power MOSFET

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ONSEMI

安森美半导体