磁开关 - 低压高速系列

MT8161采用BCD工艺，具有高性能以及高可靠性。芯片内集成了霍尔感应元件。工作电压（2.8V~24V），良好的反向电压保护能力和过流保护能力，400KHz的采样频率。并且具有优良的温度补偿能力，使得芯片能工作在-40~150℃环境中，并保持优良的性能以及一致性。 • 双极锁存型开关\n• 工作电压 2.8V~24V\n• -27V反压保护 & 过流保护\n• 环境工作温度 -40~150℃\n• 开漏输出\n• 400KHz采样频率;

MagnTek

麦歌恩

Ultra-Low Noise and High PSRR LDO Regulator

文件：633.28 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • 16-level gate drive peak current – 16mA - 1000mA source current – 32mA - 2000m

文件：1.60667 Mbytes 页数：43 Pages

TI

德州仪器

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • 16-level gate drive peak current – 16mA - 1000mA source current – 32mA - 2000m

文件：1.65841 Mbytes 页数：45 Pages

TI

德州仪器