MT5C1008DCJ-35说明书PDF资料供应代理-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MT5C1008DCJ-35	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008DCJ-35/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008DCJ-35L	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008DCJ-35L/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008DCJ-35LSLASH883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008DCJ-35SLASH883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN

详细参数

型号：
MT5C1008DCJ-35
制造商：
AUSTIN
制造商全称：
Austin Semiconductor
功能描述：
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市达恩科技有限公司	MT5C1008DCJ-35L	ASI	24+	CSOP	300	进口原装正品优势供应	询价
深圳市河锋鑫科技有限公司	MT5C1008DCJ-35L	ASI	2021+		60000	原装现货，欢迎询价	询价
贸泽芯城（深圳）电子科技有限公司	MT5C1008DCJ-35L	ASI	23+	CSOJ32	14950	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市赛特兴科技有限公司	MT5C1008DCJ-35L	ASI	QQ咨询	CSOP	113	全新原装研究所指定供货商	询价
深圳市瑞祥辉半导体有限公司	MT5C1008DCJ-35L	ASI	2308+	CSOP	4862	只做进口原装!假一赔百!自己库存价优!	询价
深圳市创新迹电子有限公司	MT5C1008DCJ-35L	ASI	22+	CSOP	20000	公司只做原装品质保障	询价
深圳市科恒伟业电子有限公司	MT5C1008DCJ-35L	原厂	2540+	CSOJ32	6852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市威雅利发展有限公司	MT5C1008DCJ-45	ASI	0826+	SOJ	15	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市安富世纪电子有限公司	MT5C1008DCJ-45	ASI	23+	SOJ	15	全新原装正品现货,支持订货	询价
齐创科技(上海,北京,青岛)有限公司	MT5C1008DCJ-70	ASI	23+	SOJ32	5000	原装正品,假一罚十	询价

更多MT5C1008DCJ-35供应商更新时间2026-2-1 14:16:00

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