MT5C1008DCJ-35L/883C中文资料AUSTIN数据手册PDF规格书

GENERAL DESCRIPTION

The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.

FEATURES

• High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns

• Battery Backup: 2V data retention

• Low power standby

• High-performance, low-power CMOS process

• Single +5V (+10) Power Supply

• Easy memory expansion with CE1, CE2, and OE options.

• All inputs and outputs are TTL compatible