MT5C1008DCJ-45数据手册批发采购AUSTIN-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MT5C1008DCJ-45	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008DCJ-45/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008DCJ-45L	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008DCJ-45L/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008DCJ-45LSLASH883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008DCJ-45SLASH883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN

详细参数

型号：
MT5C1008DCJ-45
制造商：
AUSTIN
制造商全称：
Austin Semiconductor
功能描述：
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威雅利发展有限公司	MT5C1008DCJ-45	ASI	0826+	SOJ	15	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市赛特兴科技有限公司	MT5C1008DCJ-45	ASI	QQ咨询	SOJ	838	全新原装研究所指定供货商	询价
深圳市安富世纪电子有限公司	MT5C1008DCJ-45	ASI	23+	SOJ	15	全新原装正品现货,支持订货	询价
深圳市创新迹电子有限公司	MT5C1008DCJ-45	ASI	22+	SOJ	20000	公司只做原装品质保障	询价
齐创科技(上海,北京,青岛)有限公司	MT5C1008DCJ-70	ASI	23+	SOJ32	5000	原装正品,假一罚十	询价
深圳市一线半导体有限公司	MT5C1008DJ	MIT	24+	SMD	5000	公司存货	询价
上海鑫科润电子科技有限公司	MT5C1008DJ	MIT	93	SOJ	26	原装现货海量库存欢迎咨询	询价
深圳市佳鑫美电子科技有限公司	MT5C1008DJ	MIT	25+	SOJ	2987	绝对全新原装现货供应!	询价
深圳市科达星科技有限公司	MT5C1008DJ	MICRONT	24+	QFP	37500	原装正品现货,价格有优势!	询价
深圳市欧立现代科技有限公司	MT5C1008DJ15	micron	24+	N/A	6980	原装现货,可开13%税票	询价

更多MT5C1008DCJ-45供应商更新时间2026-1-31 18:18:00

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