128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

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AUSTIN

SMD

MTK

上传：深圳市兴联达电子有限公司(原兴达电子)

MTK

上传：深圳市兴联达电子有限公司(原兴达电子)

MTK

上传：深圳市兴联达电子有限公司(原兴达电子)

MTK

上传：深圳市兴联达电子有限公司(原兴达电子)