MT5C1008EC-20资料使用说明书贸易商AUSTIN-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MT5C1008EC-20	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008EC-20/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008EC-20L	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008EC-20L/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008EC-20LSLASH883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008EC-20SLASH883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN

详细参数

型号：
MT5C1008EC-20
制造商：
AUSTIN
制造商全称：
Austin Semiconductor
功能描述：
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	MT5C1008EC-20/883	ASID	24+	CLCC	25		询价
深圳市威尔健半导体有限公司	MT5C1008EC-20L	ASI	23+	LCC32	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	MT5C1008EC-20/883C	ASI	2021+		60000	原装现货，欢迎询价	询价
贸泽芯城（深圳）电子科技有限公司	MT5C1008EC-20/883C	ASI	23+	CLCC	14954	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
海芯未来半导体电子（深圳）有限公司	MT5C1008EC-20L/883C	ASI	25+	DLCC32	5151	只做原装进口!正品支持实单!	询价
深圳市瑞祥辉半导体有限公司	MT5C1008EC-20/883C	原装	2308+	LCC	4862	只做进口原装!假一赔百!自己库存价优!	询价
深圳市安富世纪电子有限公司	MT5C1008EC-20L/883C	ASI	23+	DLCC32	38	全新原装正品现货,支持订货	询价
深圳市勤思达科技有限公司	MT5C1008EC-20L/883C	ASI	24+	DLCC32	5000	全新原装正品,现货销售	询价
深圳市澳亿芯电子科技有限公司	MT5C1008EC-20L/883C	ASI	24+	DLCC32	5000	只有原装	询价
深圳市天芯威科技有限公司	MT5C1008EC-20L/883C	ASI	24+	DLCC32	25836	新到现货，只做全新原装正品	询价

更多MT5C1008EC-20供应商更新时间2026-1-28 15:30:00

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