DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 页数：20 Pages

Micron

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 页数：20 Pages

Micron

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 页数：20 Pages

Micron

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 页数：20 Pages

Micron

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 页数：20 Pages

Micron

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 页数：20 Pages

Micron

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 页数：20 Pages

Micron

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 页数：20 Pages

Micron

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.

文件：397.75 Kbytes 页数：22 Pages

Micron

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.

文件：397.75 Kbytes 页数：22 Pages

Micron

美光