MT4LC8M8B6TG-5中文资料镁光数据手册PDF规格书

GENERAL DESCRIPTION

The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each.

FEATURES

• Single +3.3V ±0.3V power supply

• Industry-standard x8 pinout, timing, functions, and packages

• 13 row, 10 column addresses (E1) or 12 row, 11 column addresses (B6)

• High-performance CMOS silicon-gate process

• All inputs, outputs and clocks are LVTTLcompatible

• FAST PAGE MODE (FPM) access

• 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms

• Optional self refresh (S) for low-power data retention