DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 页数：20 Pages

MICRON

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 页数：20 Pages

MICRON

美光

SOT23-6/DFN2X2-8

AEROSEMI航天民芯

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sop-8

M3TEK来颉

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QFN

M3TEK来颉

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