首页>MT28F008B3>规格书详情

MT28F008B3集成电路(IC)的存储器规格书PDF中文资料

MT28F008B3
厂商型号

MT28F008B3

参数属性

MT28F008B3 封装/外壳为40-TFSOP(0.724",18.40mm 宽);包装为管件;类别为集成电路(IC)的存储器;产品描述:IC FLASH 8MBIT PARALLEL 40TSOP I

功能描述

FLASH MEMORY

封装外壳

40-TFSOP(0.724",18.40mm 宽)

文件大小

416.14 Kbytes

页面数量

30

生产厂商 Micron Technology
企业简称

MICRON镁光

中文名称

美国镁光科技有限公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-8-3 22:58:00

人工找货

MT28F008B3价格和库存,欢迎联系客服免费人工找货

MT28F008B3规格书详情

GENERAL DESCRIPTION

The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a VPP voltage of either 3.3V or 5V, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process.

The MT28F008B3 and MT28F800B3 are organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.

Refer to Micron’s Web site (www.micron.com/flash) for the latest data sheet.

FEATURES

• Eleven erase blocks:

16KB/8K-word boot block (protected)

Two 8KB/4K-word parameter blocks

Eight main memory blocks

• Smart 3 technology (B3):

3.3V ±0.3V VCC

3.3V ±0.3V VPP application programming

5V ±10 VPP application/production programming1

• Compatible with 0.3µm Smart 3 device

• Advanced 0.18µm CMOS floating-gate process

• Address access time: 90ns

• 100,000 ERASE cycles

• Industry-standard pinouts

• Inputs and outputs are fully TTL-compatible

• Automated write and erase algorithm

• Two-cycle WRITE/ERASE sequence

• TSOP, SOP and FBGA packaging options

• Byte- or word-wide READ and WRITE

(MT28F800B3):

1 Meg x 8/512K x 16

产品属性

  • 产品编号:

    MT28F008B3VG-9 B TR

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    管件

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    8Mb(1M x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    90ns

  • 电压 - 供电:

    3V ~ 3.6V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    40-TFSOP(0.724",18.40mm 宽)

  • 供应商器件封装:

    40-TSOP I

  • 描述:

    IC FLASH 8MBIT PARALLEL 40TSOP I

供应商 型号 品牌 批号 封装 库存 备注 价格
MICRO
2016+
SOP
3000
主营TI,绝对原装,假一赔十,可开17%增值税发票!
询价
MT
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
MT
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
MSM
23+
TSOP
116
原装正品现货
询价
MT
1922+
TSOP40
6852
只做原装正品现货!或订货假一赔十!
询价
MICRO
21+
SOP
36680
只做原装,质量保证
询价
Micron
2004
102
公司优势库存 热卖中!!
询价
MICRO
23+
SOP
18204
原装正品代理渠道价格优势
询价
24+
5000
公司存货
询价
21+
TSSOP
12588
全新原装深圳现货
询价