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MT28C6428P18中文资料镁光数据手册PDF规格书

MT28C6428P18
厂商型号

MT28C6428P18

功能描述

FLASH AND SRAM COMBO MEMORY

文件大小

571.59 Kbytes

页面数量

48

生产厂商 Micron Technology
企业简称

MICRON镁光

中文名称

美国镁光科技有限公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-8-4 10:04:00

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MT28C6428P18规格书详情

GENERAL DESCRIPTION

The MT28C6428P20 and MT28C6428P18 combination Flash and SRAM memory devices provide a compact, low-power solution for systems where PCB real estate is at a premium. The dual-bank Flash devices are high-performance, high-density, nonvolatile memory with a revolutionary architecture that can significantly improve system performance.

FEATURES

• Flexible dual-bank architecture

• Support for true concurrent operations with no latency:

Read bank b during program bank a and vice versa

Read bank b during erase bank a and vice versa

• Organization: 4,096K x 16 (Flash)

512K x 16 (SRAM)

• Basic configuration:

Flash

Bank a (16Mb Flash for data storage)

– Eight 4K-word parameter blocks

– Thirty-one 32K-word blocks

Bank b (48Mb Flash for program storage)

– Ninety-six 32K-word main blocks

SRAM

8Mb SRAM for data storage

– 512K-words

• F_VCC, VCCQ, F_VPP, S_VCC voltages

MT28C6428P20

1.80V (MIN)/2.20V (MAX) F_VCC read voltage

1.80V (MIN)/2.20V (MAX) S_VCC read voltage

1.80V (MIN)/2.20V (MAX) VCCQ

MT28C6428P18

1.70V (MIN)/1.90V (MAX) F_VCC read voltage

1.70V (MIN)/1.90V (MAX) S_VCC read voltage

1.70V (MIN)/1.90V (MAX) VCCQ

MT28C6428P20/P18

1.80V (TYP) F_VPP (in-system PROGRAM/ERASE)

1.0V (MIN) S_VCC (SRAM data retention)

12V ±5 (HV) F_VPP (in-house programming and

accelerated programming algorithm [APA]

activation)

• Asynchronous access time

Flash access time: 80ns @ 1.80V F_VCC

SRAM access time: 80ns @ 1.80V S_VCC

• Page Mode read access

Interpage read access: 80ns @ 1.80V F_VCC

Intrapage read access: 30ns @ 1.80V F_VCC

• Low power consumption

• Enhanced suspend options

ERASE-SUSPEND-to-READ within same bank

PROGRAM-SUSPEND-to-READ within same bank

ERASE-SUSPEND-to-PROGRAM within same bank

• Read/Write SRAM during program/erase of Flash

• Dual 64-bit chip protection registers for security purposes

• PROGRAM/ERASE cycles

100,000 WRITE/ERASE cycles per block

• Cross-compatible command set support

Extended command set

Common flash interface (CFI) compliant

产品属性

  • 型号:

    MT28C6428P18

  • 制造商:

    MICRON

  • 制造商全称:

    Micron Technology

  • 功能描述:

    FLASH AND SRAM COMBO MEMORY

供应商 型号 品牌 批号 封装 库存 备注 价格
MRON/镁光
24+
NA/
996
优势代理渠道,原装正品,可全系列订货开增值税票
询价
MT
24+
TSOP
618
询价
MT
25+23+
TSOP
34896
绝对原装正品全新进口深圳现货
询价
Micron
1844+
BGA
9852
只做原装正品假一赔十为客户做到零风险!!
询价
MICRON/镁光
23+
FBGA
50000
全新原装正品现货,支持订货
询价
MICTON
23+
BGA
8560
受权代理!全新原装现货特价热卖!
询价
Micron/镁光
24+
TSOP-56
30000
原装正品公司现货,假一赔十!
询价
MICRON
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
MICRON
24+
BGA
35200
一级代理/放心采购
询价
MICRON/美光
22+
FBGA
18000
原装现货原盒原包.假一罚十
询价