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MT28C6428P18中文资料镁光数据手册PDF规格书
MT28C6428P18规格书详情
GENERAL DESCRIPTION
The MT28C6428P20 and MT28C6428P18 combination Flash and SRAM memory devices provide a compact, low-power solution for systems where PCB real estate is at a premium. The dual-bank Flash devices are high-performance, high-density, nonvolatile memory with a revolutionary architecture that can significantly improve system performance.
FEATURES
• Flexible dual-bank architecture
• Support for true concurrent operations with no latency:
Read bank b during program bank a and vice versa
Read bank b during erase bank a and vice versa
• Organization: 4,096K x 16 (Flash)
512K x 16 (SRAM)
• Basic configuration:
Flash
Bank a (16Mb Flash for data storage)
– Eight 4K-word parameter blocks
– Thirty-one 32K-word blocks
Bank b (48Mb Flash for program storage)
– Ninety-six 32K-word main blocks
SRAM
8Mb SRAM for data storage
– 512K-words
• F_VCC, VCCQ, F_VPP, S_VCC voltages
MT28C6428P20
1.80V (MIN)/2.20V (MAX) F_VCC read voltage
1.80V (MIN)/2.20V (MAX) S_VCC read voltage
1.80V (MIN)/2.20V (MAX) VCCQ
MT28C6428P18
1.70V (MIN)/1.90V (MAX) F_VCC read voltage
1.70V (MIN)/1.90V (MAX) S_VCC read voltage
1.70V (MIN)/1.90V (MAX) VCCQ
MT28C6428P20/P18
1.80V (TYP) F_VPP (in-system PROGRAM/ERASE)
1.0V (MIN) S_VCC (SRAM data retention)
12V ±5 (HV) F_VPP (in-house programming and
accelerated programming algorithm [APA]
activation)
• Asynchronous access time
Flash access time: 80ns @ 1.80V F_VCC
SRAM access time: 80ns @ 1.80V S_VCC
• Page Mode read access
Interpage read access: 80ns @ 1.80V F_VCC
Intrapage read access: 30ns @ 1.80V F_VCC
• Low power consumption
• Enhanced suspend options
ERASE-SUSPEND-to-READ within same bank
PROGRAM-SUSPEND-to-READ within same bank
ERASE-SUSPEND-to-PROGRAM within same bank
• Read/Write SRAM during program/erase of Flash
• Dual 64-bit chip protection registers for security purposes
• PROGRAM/ERASE cycles
100,000 WRITE/ERASE cycles per block
• Cross-compatible command set support
Extended command set
Common flash interface (CFI) compliant
产品属性
- 型号:
MT28C6428P18
- 制造商:
MICRON
- 制造商全称:
Micron Technology
- 功能描述:
FLASH AND SRAM COMBO MEMORY
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MRON/镁光 |
24+ |
NA/ |
996 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
MT |
24+ |
TSOP |
618 |
询价 | |||
MT |
25+23+ |
TSOP |
34896 |
绝对原装正品全新进口深圳现货 |
询价 | ||
Micron |
1844+ |
BGA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
MICRON/镁光 |
23+ |
FBGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
MICTON |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
Micron/镁光 |
24+ |
TSOP-56 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
MICRON |
24+ |
BGA |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
询价 | ||
MICRON |
24+ |
BGA |
35200 |
一级代理/放心采购 |
询价 | ||
MICRON/美光 |
22+ |
FBGA |
18000 |
原装现货原盒原包.假一罚十 |
询价 |