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MT28F008B3

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F008B3SG-9B

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F008B3SG-9BET

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F008B3SG-9T

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F008B3SG-9TET

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F008B3VG-9B

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F008B3VG-9BET

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F008B3VG-9T

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F008B3VG-9TET

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F008B3WG-9B

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

详细参数

  • 型号:

    MT28F008B3

  • 制造商:

    MICRON

  • 制造商全称:

    Micron Technology

  • 功能描述:

    FLASH MEMORY

供应商型号品牌批号封装库存备注价格
24+
5000
公司存货
询价
N/A
24+
TSSOP
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
SAMSUNG
23+
TSOP
8650
受权代理!全新原装现货特价热卖!
询价
SAMSUNG
34
TSOP
416
原装正品
询价
N/A
22+
TSSOP
25000
只有原装原装,支持BOM配单
询价
MICRON
2020+
TSOP
937
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MICRON
23+
DIP-8P
5000
原装正品,假一罚十
询价
MICRO
2016+
SOP
3000
主营TI,绝对原装,假一赔十,可开17%增值税发票!
询价
MICRON
24+
TSOP
4650
询价
MT
TSOP40
26300
全新原装进口自己库存优势
询价
更多MT28F008B3供应商 更新时间2025-7-21 16:00:00