首页 >MT28F008B3>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MT28F008B3 | FLASH MEMORY GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a 文件：416.14 Kbytes 页数：30 Pages | Micron 美光 | Micron | |
MT28F008B3 | FLASH MEMORY | Micron 美光 | Micron | |
FLASH MEMORY GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a 文件：416.14 Kbytes 页数：30 Pages | Micron 美光 | Micron | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a 文件：416.14 Kbytes 页数：30 Pages | Micron 美光 | Micron | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a 文件：416.14 Kbytes 页数：30 Pages | Micron 美光 | Micron | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a 文件：416.14 Kbytes 页数：30 Pages | Micron 美光 | Micron | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a 文件：416.14 Kbytes 页数：30 Pages | Micron 美光 | Micron | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a 文件：416.14 Kbytes 页数：30 Pages | Micron 美光 | Micron | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a 文件：416.14 Kbytes 页数：30 Pages | Micron 美光 | Micron | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a 文件：416.14 Kbytes 页数：30 Pages | Micron 美光 | Micron |
详细参数
- 型号：
MT28F008B3
- 制造商：
MICRON
- 制造商全称：
Micron Technology
- 功能描述：
FLASH MEMORY
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
5000 |
公司存货 |
询价 | ||||
N/A |
24+ |
TSSOP |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
SAMSUNG |
23+ |
TSOP |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
SAMSUNG |
34 |
TSOP |
416 |
原装正品 |
询价 | ||
MICRON |
25+ |
TSOP |
937 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
MICRON |
23+ |
DIP-8P |
5000 |
原装正品,假一罚十 |
询价 | ||
MICRO |
2016+ |
SOP |
3000 |
主营TI,绝对原装,假一赔十,可开17%增值税发票! |
询价 | ||
MICRON |
25+ |
TSOP |
4650 |
询价 | |||
MT |
TSOP40 |
26300 |
全新原装进口自己库存优势 |
询价 | |||
MICRON |
1725+ |
? |
5600 |
只做原装进口,假一罚十 |
询价 |
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