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MT28C6428P20中文资料镁光数据手册PDF规格书
MT28C6428P20规格书详情
GENERAL DESCRIPTION
The MT28C6428P20 and MT28C6428P18 combination Flash and SRAM memory devices provide a compact, low-power solution for systems where PCB real estate is at a premium. The dual-bank Flash devices are high-performance, high-density, nonvolatile memory with a revolutionary architecture that can significantly improve system performance.
FEATURES
• Flexible dual-bank architecture
• Support for true concurrent operations with no latency:
Read bank b during program bank a and vice versa
Read bank b during erase bank a and vice versa
• Organization: 4,096K x 16 (Flash)
512K x 16 (SRAM)
• Basic configuration:
Flash
Bank a (16Mb Flash for data storage)
– Eight 4K-word parameter blocks
– Thirty-one 32K-word blocks
Bank b (48Mb Flash for program storage)
– Ninety-six 32K-word main blocks
SRAM
8Mb SRAM for data storage
– 512K-words
• F_VCC, VCCQ, F_VPP, S_VCC voltages
MT28C6428P20
1.80V (MIN)/2.20V (MAX) F_VCC read voltage
1.80V (MIN)/2.20V (MAX) S_VCC read voltage
1.80V (MIN)/2.20V (MAX) VCCQ
MT28C6428P18
1.70V (MIN)/1.90V (MAX) F_VCC read voltage
1.70V (MIN)/1.90V (MAX) S_VCC read voltage
1.70V (MIN)/1.90V (MAX) VCCQ
MT28C6428P20/P18
1.80V (TYP) F_VPP (in-system PROGRAM/ERASE)
1.0V (MIN) S_VCC (SRAM data retention)
12V ±5 (HV) F_VPP (in-house programming and
accelerated programming algorithm [APA]
activation)
• Asynchronous access time
Flash access time: 80ns @ 1.80V F_VCC
SRAM access time: 80ns @ 1.80V S_VCC
• Page Mode read access
Interpage read access: 80ns @ 1.80V F_VCC
Intrapage read access: 30ns @ 1.80V F_VCC
• Low power consumption
• Enhanced suspend options
ERASE-SUSPEND-to-READ within same bank
PROGRAM-SUSPEND-to-READ within same bank
ERASE-SUSPEND-to-PROGRAM within same bank
• Read/Write SRAM during program/erase of Flash
• Dual 64-bit chip protection registers for security purposes
• PROGRAM/ERASE cycles
100,000 WRITE/ERASE cycles per block
• Cross-compatible command set support
Extended command set
Common flash interface (CFI) compliant
产品属性
- 型号:
MT28C6428P20
- 制造商:
MICRON
- 制造商全称:
Micron Technology
- 功能描述:
FLASH AND SRAM COMBO MEMORY
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MICRON |
24+ |
BGA |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
询价 | ||
MICRON/美光 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
Micron |
1844+ |
BGA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
Micron/镁光 |
21+ |
TSOP-56 |
8080 |
只做原装,质量保证 |
询价 | ||
Micron/镁光 |
24+ |
TSOP-56 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
Micron |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
MICRON |
24+ |
TSOP56 |
5000 |
全新原装正品,现货销售 |
询价 | ||
Micron Technology Inc |
23+/24+ |
56-TFSOP |
8600 |
只供原装进口公司现货+可订货 |
询价 | ||
Micron |
22+ |
SMD |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
Micron |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |