Silicon Schottky N-Type Diodes: High Barrier

MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer and detector performance is obtained with LO power of +2 dBm to +8 dBm per diode. These can also be used in doubler, limiter, detec ·VF, RD and CJ matching options.\n·Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available\n·Chip, beam lead or packaged devices.;

MACOM

SOT89

MST

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QFP

MASTAR

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QFP

MSTAR

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QFP-64

MSTAR

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