High Barrier Silicon Schottky Diodes

MACOM's MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode. ·VF , RD and CJ matching options\n·Hi-Rel screening per MIL-PRF-19500and MIL-PRF-38534 available\n·Chip, beam lead or packaged devices;

MACOM

High Barrier Silicon Schottky Diodes

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MA-COM

MST
SOT89

MST

迈尔斯通

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MASTAR
QFP

MASTAR

上传：深圳市胜彬电子有限公司

MSTAR
QFP

MSTAR

上传：深圳市胜彬电子有限公司