Medium Barrier Silicon Schottky Diodes

文件：702.46 Kbytes 页数：5 Pages

MA-COM

Medium Barrier Silicon Schottky Diodes

文件：702.46 Kbytes 页数：5 Pages

MA-COM

Medium Barrier Silicon Schottky Diodes

文件：702.46 Kbytes 页数：5 Pages

MA-COM

Medium Barrier Silicon Schottky Diodes

文件：702.46 Kbytes 页数：5 Pages

MA-COM

Medium Barrier Silicon Schottky Diodes

MACOM's MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. ·VF , RD and CJmatching options\n·Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available\n·Chip, beam lead or packaged devices;

MACOM

Silicon Schottky N-Type Diodes: Medium Barrier

MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. These can also be used in doubler, limiter, detector and sample ·VF, RD and CJ matching options.\n·Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available\n·Chip, beam lead or packaged devices.\n;

MACOM

Medium Barrier Silicon Schottky Diodes

MACOM's MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. ·VF , RD and CJmatching options\n·Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available\n·Chip, beam lead or packaged devices;

MACOM

Package：B10B；包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：SCHOTTKY DIODE,BEAMLEAD, B10B

MACOM Technology Solutions

Package：E25；包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：SCHOTTKY DIODE,BEAMLEAD, E25-1

MACOM Technology Solutions

Package：B10B；包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：SCHOTTKY DIODE,BEAMLEAD, B10B

MACOM Technology Solutions