Low Barrier Silicon Schottky Diodes

MACOM's MSS30,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. ·VF , RD and CJ matching options\n·Hi-Rel screening per MIL-PRF-19500and MIL-PRF-38534 available\n·Chip, beam lead or packaged devices;

MACOM

Low Barrier Silicon Schottky Diodes

文件：706.67 Kbytes 页数：5 Pages

MA-COM

Package：B10B；包装：散装 类别：分立半导体产品 二极管 - 射频 描述：SCHOTTKY DIODE,BEAMLEAD, B10B

MACOM Technology Solutions

MST
SOT89

MST

迈尔斯通

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MASTAR
QFP

MASTAR

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