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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
MSRTA200100A	文件：397.83 Kbytes Page：3 Pages	Isolation Type Package	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MSRTA200100AD	文件：393.21 Kbytes Page：3 Pages	Silicon Standard Recovery Diode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MSRTA200100AD	文件：644.3 Kbytes Page：3 Pages	Silicon Standard Recovery Diode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MSRTA200100AD	文件：644.3 Kbytes Page：3 Pages	Silicon Standard Recovery Diode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MSRTA200100AD	文件：651.58 Kbytes Page：3 Pages	Silicon Standard Recovery Diode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MSRTA200100AD_18	文件：644.3 Kbytes Page：3 Pages	Silicon Standard Recovery Diode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MSRTA200100AD	文件：100 bytes Page：1 Pages	包装：散装封装/外壳：三塔类别：分立半导体产品二极管 - 整流器 - 阵列描述：DIODE GEN 1KV 200A 3 TOWER	GeneSiC Semiconductor GeneSiC Semiconductor	GeneSiC Semiconductor
MSRTA200100D	文件：397.83 Kbytes Page：3 Pages	IsolationTypePackage	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MSRTA200100D	文件：644.3 Kbytes Page：3 Pages	SiliconStandardRecoveryDiode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MSRTA200100D	文件：651.58 Kbytes Page：3 Pages	SiliconStandardRecoveryDiode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MSRTA200100D	文件：644.3 Kbytes Page：3 Pages	SiliconStandardRecoveryDiode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MSRTA200100D	文件：393.21 Kbytes Page：3 Pages	SiliconStandardRecoveryDiode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
PNE200100CPE	文件：926.39 Kbytes Page：13 Pages	200V,2x5Adualcommoncathodehyperfastrecoveryrectifier Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤5A(perdiode) •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechno	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PNE200100CPE-Q	文件：264.34 Kbytes Page：13 Pages	200V,2x5Adualcommoncathodehyperfastrecoveryrectifier Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤5A(perdiode) •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechno	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PNE200100CPE-QZ	文件：264.34 Kbytes Page：13 Pages	200V,2x5Adualcommoncathodehyperfastrecoveryrectifier Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤5A(perdiode) •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechno	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PNE200100CPEZ	文件：926.39 Kbytes Page：13 Pages	200V,2x5Adualcommoncathodehyperfastrecoveryrectifier Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤5A(perdiode) •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechno	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PNE200100EPE	文件：264.38 Kbytes Page：12 Pages	200V,10Ahyperfastrecoveryrectifier Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤10A •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechnology •Pla	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PNE200100EPE-Q	文件：264.5 Kbytes Page：12 Pages	200V,10Ahyperfastrecoveryrectifier Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤10A •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechnology •Pla	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PNE200100EPE-QZ	文件：264.5 Kbytes Page：12 Pages	200V,10Ahyperfastrecoveryrectifier Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤10A •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechnology •Pla	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PNE200100EPEZ	文件：264.38 Kbytes Page：12 Pages	200V,10Ahyperfastrecoveryrectifier Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤10A •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechnology •Pla	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	MSRTA200100AD	GeneSiC Semiconductor	24+	三塔	9350	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
深圳市艾宇欣科技有限公司	MSRTA200120(A)D	GeneSiC	1935+	N/A	55	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	MSRTA200120(A)D	GENESIC	1809+	三塔	96	就找我吧!--邀您体验愉快问购元件!	询价
深圳市易讯博科技有限公司	MSRTA200120(A)D	GeneSiC	22+	NA	55	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	MSRTA200120(A)D	GeneSiC Semiconductor	22+	Three Tower	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	MSRTA200120(A)D	GeneSiC Semiconductor	21+	Three Tower	13880	公司只售原装,支持实单	询价
深圳市吉铭电子科技有限公司	MSRTA200120(A)D	GeneSiC Semiconductor	21+	Three Tower	610880	本公司只售原装支持实单	询价
易创佳业科技（深圳）有限公司	MSRTA200120(A)D	GeneSiC Semiconductor	23+	Three Tower	9000	原装正品，支持实单	询价

更多MSRTA200100A供应商更新时间2024-9-21 15:00:00

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