MSP20065G1中文资料下载供应价格MSemitek-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MSP20065G1	文件：300 bytes Page：1 Pages	SiC 二极管	MSemitek 美浦森半导体	MSemitek
TSCDF20065G1	文件：349.41 Kbytes Page：6 Pages	20A, 650V SiC Merged PIN Schottky Diode FEATURES Max junction temperature 175°C MPS structure for high ruggedness to forward current surge events High-speed switching possible High forward surge capability High-frequency operation Positive temperature coefficient on VF RoHS compliant Halogen-free APPLICATIONS General purpose 文件：349.41 Kbytes 页数：6 Pages	TSC 台湾半导体	TSC
TSCDH20065G1	文件：393.9 Kbytes Page：6 Pages	20A, 650V SiC Merged PIN Schottky Diode FEATURES Max junction temperature 175°C MPS structure for high ruggedness to forward current surge events High-speed switching possible High forward surge capability High-frequency operation Positive temperature coefficient on VF RoHS compliant Halogen-free APPLICATIONS General purpose 文件：393.9 Kbytes 页数：6 Pages	TSC 台湾半导体	TSC
TSCDT20065G1	文件：383.54 Kbytes Page：6 Pages	20A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward surge capability ● High-frequency operation ● Positive temperature coefficient on VF ● RoHS compliant ● Halogen-free APPLICATIONS 文件：383.54 Kbytes 页数：6 Pages	TSC 台湾半导体	TSC

更多MSP20065G1供应商更新时间2026-1-25 10:10:00