-20V(D-S) P-Channel Enhancement Mode Power MOS FET

文件：405.17 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

Low Voltage MOS FETs

MORESEMI

摩矽半导体

Schottky Barrier Diode 30V, 200mA Rectifier

Features • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. • Ultraminiature (1608 size) and thin (0.6mm) leadless package. Applications • High frequency rectification (switching regulators, converters, choppers).

文件：35.03 Kbytes 页数：3 Pages

SANYO

三洋

Schottky Barrier Diode 30V, 0.2A Rectifier

30V, 0.2A Rectifier eatures • Supports automatic mounting and permits SBH0203R applied sets to be made smaller. • Low forward voltage (VF max=0.5V). • Average output current : IO=0.2A.

文件：48.34 Kbytes 页数：4 Pages

SANYO

三洋

Schottky Barrier Diode 30V, 0.2A Rectifier

30V, 0.2A Rectifier Features • Supports automatic mounting and permits SBM0203R applied sets to be made smaller. • Low forward voltage (VF max=0.6V). • Average output current : IO=0.2A.

文件：48.28 Kbytes 页数：4 Pages

SANYO

三洋