650V(D-S) N-Channel Enhancement Mode Power MOS FET

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MORESEMI

摩矽半导体

High Voltage MOS FETs

MORESEMI

摩矽半导体

N-channel MOSFET 650V, 5.5A, 2.1

Description The N6504NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 2.1 MAX. (VGS = 10 V, ID = 2.75 A)  Low input capacitance Ciss = 950pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±5.5

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1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS

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CEL

LASER DIODE

1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This device is ideal for Synchronous Digital Hierarchy (SDH) system, STM-1, STM-

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