SILICON CARBIDE SCHOTTKY POWER RECTIFIER

文件：200.91 Kbytes 页数：5 Pages

MICROSEMI

美高森美

SiC Schottky Diodes

These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing ultrafast silicon rectifiers.

Microchip

微芯科技

SILICON CARBIDE DUAL SCHOTTKY POWER RECTIFIER

文件：67.88 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SILICON CARBIDE DUAL SCHOTTKY POWER RECTIFIER

文件：67.88 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SILICON CARBIDE DUAL SCHOTTKY POWER RECTIFIER

文件：67.88 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SiC Schottky Barrier Diodes

These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing ultrafast silicon rectifiers.  ROHS, PB Free

Microchip

微芯科技

SiC Schottky Diodes

These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing ultrafast silicon rectifiers.  ROHS, PB Free

Microchip

微芯科技